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FMM5820X
Ka-Band Power Amplifier MMIC
FEATURES *High Output Power; Pout = 35.5 dBm (Typ.) *High Linear Gain; GL = 24 dB(Typ.) *Frequency Band ; 29.5 - 30.0 GHz *Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5820X is a power amplifier MMIC that contains a fourstages amplifier, internally matched, for standard communications band in the 29.5 to 30.0GHz frequency range. This product is well suited for Ka-band V-SAT applications. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Gate-Source Voltage Input Power Storage Temperature
Symbol VDD VGG Pin Tstg
Rating 10 -3 21 -55 to +125
Unit V V dBm
RECOMMENDED OPERATING CONDITIONS Item Symbol Drain-Source Voltage VDD Input Power Pin Operating Backside Temperature Top This product should be hermetically packaged. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25)
Condition 7 18 -40 to +85
Unit V dBm
Limits Unit Min. Typ. Max. Frequency Range f VDD=7.0V 29.5 30 GHz Output Power at Pin=15dBm Pout IDD(DC)=1500mA typ. 34.5 35.5 dBm Output Power at 1dB G.C.P. P1dB Zs=Zl=50ohm 35 dBm Linear Gain Gl 20 24 dB Power Added Efficiency at Pin=15dBm Nadd 23 % Drain Current at Pin=15dBm Iddrf 2200 2800 mA Input Return Loss at Pin=-20dBm RLin -8 dB Output Return Loss at Pin=-20dBm RLout -10 dB Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1) G.C.P. : Gain Compression Point Item Symbol Test Conditions Class 0 ESD Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k) ~ 199V
Edition 1.1 January 2006
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http://www.eudyna.com/
FMM5820X
Ka-Band Power Amplifier MMIC
Output Power vs. Frequency
@VDD=7V, IDD(DC)=1500mA 38 36 34 Output Power [dBm] 32 30 28 26
Pin=4dBm Pin=8dBm Pin=16dBm
Output Power, Drain Current vs. Input Power
@VDD=7V, IDD(DC)=1500mA 38 36
P1dB Pin=12dBm
3000 f=29.5GHz 29.75GHz 30.0GHz 2800 2600 2400
Pout
Output Power [dBm]
34 32 30 28 26 24 22 -2 0 2 4 6 8 10 12 14 16 18 20 Input Power [dBm]
Drain Current
2200 2000 1800 1600 1400
24 22 20 27 27.5 28 28.5 29 29.5 30 30.5 31 31.5 Frequency [GHz]
Pin=0dBm
Power Added Efficiency vs. Frequency
@VDD=7V, IDD(DC)=1500mA 30 25 Power Added Effciency [%] 20
Pin=16dBm P1dB Pin=12dBm
IMD vs. Output Power
@VDD=7V, IDD(DC)=1500mA -15 -20 Intermodulation Distortion [dBc] -25 -30 -35 -40 -45 -50 -55 -60 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 2-tone Total Output Power [dBm]
IM5 IM3
f=29.5GHz 29.75GHz 30.0GHz
15 10 5
Pin=8dBm Pin=4dBm Pin=0dBm
0 27 27.5 28 28.5 29 29.5 30 30.5 Frequency [GHz]
31
31.5
2
Drain Current [mA]
FMM5820X
Ka-Band Power Amplifier MMIC
Output Power, Drain Current vs. Input Power by Drain Voltage
@f=29.5GHz, IDD(DC)=1500mA 38 36 34 Output Power [dBm]
Pout
Output Power, Drain Current vs. Input Power by Drain Voltage
@f=29.75GHz, IDD(DC)=1500mA
3000 VDD=5V 6V 7V 8V 2800 2600
Output Power [dBm]
38 36 34 VDD=5V 6V 7V 8V
Pout
3000 2800 2600 2400 2200 2000 1800
Drain Current
Drain Current [mA]
32 30 28 26 24 22 -2 0 2 4 6 8 10 12 14 16 18 20 Input Power [dBm]
Drain Current
2400 2200 2000 1800 1600 1400
32 30 28 26 24 22 -2 0 2 4
1600 1400
6
8
10
12
14
16
18
20
Input Power [dBm]
Output Power, Drain Current vs. Input Power by Drain Voltage
@f=30.0GHz, IDD(DC)=1500mA 38 36 34 Output Power [dBm] 32 30 28 26 24 22 -2 0 2 4 6 8 10 12 14 16 18 20 Input Power [dBm]
Drain Current Pout
Output Power, Gain vs. Drain Voltage
@IDD(DC)=1500mA
3000
38 36
Drain Current [mA]
VDD=5V 6V 7V 8V
2800 2600
f=29.5GHz 29.75GHz 30GHz
32 30
P1dB [dBm]
2200 2000 1800 1600 1400
32 30
G1dB
26 24
28 26 4 5 6
22 20 7 8 9
Drain Voltage VDD [V]
3
G1dB [dB]
2400
34
P1dB
28
Drain Current [mA]
FMM5820X
Ka-Band Power Amplifier MMIC
Output Power, Drain Current vs. Input Power by Drain Current
@f=29.5GHz, VDD=7V 38 36 34 Output Power [dBm] 32 30 28 26
Drain Current Pout
Output Power, Drain Current vs. Input Power by Drain Current
@f=29.75GHz, VDD=7V
4200 IDD(DC)=1300mA 1500mA 1700mA 1900mA 3800 3400
Output Power [dBm]
38 36 34 IDD(DC)=1300mA 1500mA 1700mA 1900mA
Pout
4200 3800 3400 3000 2600 2200 1800 1400 1000 -2 0 2 4 6 8 10 12 14 16 18 20 Input Power [dBm] Drain Current [mA]
3000 2600 2200 1800 1400 1000
Drain Current [mA]
32 30 28 26 24 22
Drain Current
24 22 -2 0 2 4 6 8 10 12 14 16 18 20 Input Power [dBm]
Output Power, Drain Current vs. Input Power by Drain Current
@f=30.0GHz, VDD=7V 38 36 34 Output Power [dBm] 32 30 28 26 24 22 -2 0 2 4 6 8 10 12 14 16 18 20 Input Power [dBm]
Drain Current Pout
Output Power, Gain vs. Drain Current
@VDD=7V
4200
38 36
Drain Current [mA]
32 f=29.5GHz 29.75GHz 30GHz
P1dB
IDD(DC)=1300mA 1500mA 1700mA 1900mA
3800 3400
30 28 G1dB [dB]
P1dB [dBm]
3000 2600 2200 1800 1400 1000
34
32 30 28 26 1100
G1dB
26 24 22 20 2100
1300
1500
1700
1900
DC Drain Current IDD(DC) [mA]
4
FMM5820X
Ka-Band Power Amplifier MMIC
IMD vs. Output Power by Drain Voltage
@f=29.5GHz, IDD(DC)=1500mA -15 -20 Intermodulation Distortion [dBc] -25 -30 -35 -40 -45 -50
IM5
IMD vs. Output Power by Drain Voltage
@f=29.75GHz, IDD(DC)=1500mA -15
Intermodulation Distortion [dBc]
VDD=5V 6V 7V 8V
IM3
-20 -25 -30 -35 -40 -45 -50 -55 -60
VDD=5V 6V 7V 8V
IM3
-55 -60 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 2-tone Total Output Power [dBm]
IM5
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
2-tone Total Output Power [dBm]
IMD vs. Output Power by Drain Voltage
@f=30.0GHz, IDD(DC)=1500mA -15 -20 Intermodulation Distortion [dBc] -25 -30 -35 -40 -45 -50
IM5
VDD=5V 6V 7V 8V
IM3
-55 -60 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 2-tone Total Output Power [dBm]
5
FMM5820X
Ka-Band Power Amplifier MMIC
IMD vs. Output Power by Drain Current
@f=29.5GHz, VDD=7V -15 -20 Intermodulation Distortion [dBc] -25 -30 -35 -40 -45 -50 -55 -60 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 2-tone Total Output Power [dBm]
IM5
IMD vs. Output Power by Drain Current
@f=29.75GHz, VDD=7V -15
Intermodulation Distortion [dBc]
IDD(DC)=1300mA 1500mA 1700mA 1900mA
IM3
-20 -25 -30 -35 -40 -45 -50 -55 -60 20 21
IDD(DC)=1300mA 1500mA 1700mA 1900mA
IM3
IM5
22
23
24
25
26
27
28
29
30
31
32
33
34
2-tone Total Output Power [dBm]
IMD vs. Output Power by Drain Current
@f=30.0GHz, VDD=7V -15 -20 Intermodulation Distortion [dBc] -25 -30 -35 -40 -45 -50 -55 -60 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 2-tone Total Output Power [dBm]
IM5
IDD(DC)=1300mA 1500mA 1700mA 1900mA
IM3
6
FMM5820X
Ka-Band Power Amplifier MMIC
S-Parameter
@VDD=7V, IDD(DC)=1500mA 30 25 20 15 10 Sxx [dB] 5 0 -5 -10 -15 -20 -25 -30 0 5 10 15 20 25 30 35 40 Frequency [GHz]
S11 S21 S22
30 25 20 15 10 Sxx [dB] 5 0 -5 -10 -15 -20 -25 -30 25
S11 S21 S22
26
27
28
29
30
31
32
33
34
35
Frequency [GHz]
7
FMM5820X
Ka-Band Power Amplifier MMIC
S-Parameter
VDD=7V, IDD=1500mA
Freq. GHz 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 29.2 29.4 29.6 29.8 30 30.2 30.4 30.6 30.8 31 32 33 34 35 36 37 38 39 40 S11 Mag. 1.000 0.999 0.996 0.996 0.989 0.987 0.983 0.982 0.982 0.975 0.976 0.972 0.969 0.975 0.969 0.971 0.952 0.955 0.950 0.951 0.937 0.949 0.936 0.937 0.931 0.914 0.804 0.647 0.468 0.440 0.399 0.380 0.337 0.306 0.282 0.243 0.188 0.160 0.140 0.294 0.465 0.606 0.657 0.722 0.799 0.851 0.859 0.869 Ang. -8.84 -17.66 -26.37 -34.93 -43.05 -50.92 -58.34 -65.47 -72.29 -78.95 -85.28 -91.04 -96.64 -101.60 -107.14 -113.35 -117.39 -122.71 -126.63 -131.24 -135.73 -140.89 -145.71 -150.80 -158.12 -167.84 179.46 171.95 167.28 166.82 167.70 165.35 165.07 165.99 165.32 166.41 172.86 -176.97 -160.53 -108.35 -114.03 -122.32 -124.85 -131.46 -137.43 -145.04 -147.72 -151.54 S21 Mag. Ang. 0.018 36.54 0.015 143.44 0.006 -82.94 0.002 163.03 0.005 -123.49 0.003 -96.08 0.003 -62.12 0.004 -122.20 0.004 -67.33 0.005 44.42 0.005 -44.57 0.003 -149.21 0.005 -47.61 0.006 -77.32 0.008 52.24 0.013 -23.85 0.007 -73.84 0.020 -95.86 0.010 -79.59 0.011 -61.73 0.008 23.94 0.005 -29.90 0.011 43.99 0.063 -13.13 0.424 -89.02 2.398 159.23 7.722 34.35 14.224 -92.06 17.900 146.98 17.789 123.51 17.899 100.05 17.595 79.78 16.941 57.74 16.452 36.28 15.515 15.36 14.801 -4.24 14.021 -24.82 13.350 -43.74 12.746 -63.98 9.312 -162.05 5.954 99.72 3.266 10.14 1.550 -74.90 0.650 -147.68 0.290 152.90 0.135 119.98 0.034 -45.15 0.011 2.17 S12 Mag. 0.001 0.000 0.001 0.001 0.001 0.003 0.002 0.002 0.003 0.003 0.003 0.002 0.004 0.006 0.005 0.004 0.005 0.005 0.005 0.006 0.001 0.001 0.006 0.006 0.006 0.006 0.008 0.003 0.009 0.011 0.010 0.016 0.010 0.007 0.005 0.008 0.011 0.004 0.009 0.013 0.003 0.015 0.004 0.010 0.006 0.008 0.001 0.009 Ang. 124.01 15.28 -45.86 -154.12 -86.15 -85.88 -108.04 -100.39 -87.88 -83.82 -101.83 -94.18 -99.30 -94.51 -82.14 -106.79 -112.94 -65.11 -108.92 -90.82 -42.84 -170.93 -70.45 -121.97 -77.70 -95.63 -84.40 -114.00 -98.96 -99.31 -89.98 -68.23 -75.84 -146.43 -102.11 -93.97 -78.28 -132.86 -84.49 -69.16 -115.53 -141.11 -141.37 -113.61 -27.36 -102.47 -29.35 -123.73 Mag. 0.984 0.962 0.947 0.975 0.982 0.972 0.948 0.923 0.909 0.904 0.908 0.910 0.914 0.914 0.914 0.913 0.905 0.903 0.895 0.877 0.861 0.839 0.803 0.756 0.615 0.321 0.173 0.045 0.230 0.245 0.263 0.291 0.297 0.300 0.287 0.293 0.301 0.274 0.267 0.232 0.222 0.303 0.430 0.605 0.722 0.808 0.861 0.866 S21 Ang. -61.76 -102.23 -123.54 -138.63 -150.35 -159.39 -166.26 -171.16 -174.58 -177.70 179.04 175.78 172.35 168.68 165.11 161.20 156.88 152.43 147.82 141.79 134.93 127.19 117.33 102.26 76.43 61.83 47.18 -104.08 -169.24 -175.41 179.90 175.02 166.30 158.16 153.01 148.54 141.72 138.48 134.17 107.88 66.80 6.06 -38.89 -68.64 -92.46 -111.31 -126.53 -138.77
8
FMM5820X
Ka-Band Power Amplifier MMIC
Tch vs. Drain Voltage (Reference)
IDD=1500mA
Monunted on Cu-Plate(t=0.5mm) with AuSn soldering.
80 70 60 Tch [ ] 50 40 30 20 10 0 4 5 6 VDD [V] 7 8 9
MTTF vs. Tch
1.E+12 1.E+11 1.E+10 1.E+09 MTTF (hrs) 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 1.E+02 1.E+01 50 100 150 Tch ( ) 200 250 Ea=1.56eV
9
FMM5820X
Ka-Band Power Amplifier MMIC
Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters) VGG1
0 2620 2515 2485 275
VDD1
825
VDD3
1685
VDD5
2345
VDD7
3875 4225 2620 2515 2485
1310
1310
135 105 0 0
135 105 0
(VGG2)
275
825
1685
2345
3875
4225
VDD2
VDD4
VDD6
VDD8
Chip Size : 422530um x 262030um Chip Thickness : 6020um Bonding Pad Size : 160um x 80um NOTE: Gate voltage is required from either or both bonding pad( VGG1 or/and VGG2).
10
FMM5820X
Ka-Band Power Amplifier MMIC
Assembly Diagrams Recommended assembly 1 uF VGG
100 pF 100 pF 100 pF 100 pF
1 uF VDD
RF_in
RF_Out
VDD
100 pF 100 pF 100 pF 100 pF
1 uF
"Copper" is the recommended material for the package or carrier.
11
FMM5820X
Ka-Band Power Amplifier MMIC
DIE ATTACH 1) The die-attach station must have accurate temperature control, and an inert forming gas should be used. 2) Chips should be kept at room temperature except during die-attach. 3) Place package or carrier on the heated stage. 4) Lightly grasp the chip edges by the longer side using tweezers. Die attach conditions Stage Temperature: 300 to 310 Time : less than 15 seconds AuSn Preform Volume : per next Figure
2500 Volume of Au-Sn Perform (10 -3/mm 3)
2000
FMM5820X
1500
1000
500
0 0 2 4 6 8 10 12 14 16 18 20 Area of Chip Bach Surface (mm^2)
WIRE BONDING The bonding equipment must be properly grounded. The following or equivalent equipment, tools, materials, and conditions are recommended. 1) Bonding Equipment and Bonding Tool. Bonding Equipment : West Bond Model 7400 (Manual Bonder) Bonding Tool : CCOD-1/16-S-437-60-F-2010-MP (Deweyl) 2) Bonding Wire Material : Hard or Half hard gold Diameter : 0.7 to 1.0 mil 3) Bonding Conditions Method : Thermal Compression Bonding with Ultrasonic Power Tool Force : 0.196 N 0.0196 N Stage Temperature : 215 5 Tool Heater : None Ultrasonic Power Transmitter : West Bond Model 1400 Duration : 150 mS/Bond
12
FMM5820X
Ka-Band Power Amplifier MMIC
For further information please contact :
Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: +1 408 232-9500 FAX: +1 408 428-9111 Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices International Srl Via Teglio 8/2 - 20158 Milano, Italy TEL: +39-02-8738-1695 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Suite 1906B, Tower 6, China Hong Kong City 33 Canton Road, Tsimshatsui, Kowloon Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170
CAUTION
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2006 Eudyna Devices Inc.
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